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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BYD71 series Ultra fast low-loss controlled avalanche rectifiers
Product specification Supersedes data of 1996 May 24 1996 Sep 19
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * Available in ammo-pack.
k a
BYD71 series
hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION Cavity free cylindrical SOD91 glass package through ImplotecTM(1) technology. This package is
MAM196
Fig.1 Simplified outline (SOD91) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD71A BYD71B BYD71C BYD71D BYD71E BYD71F BYD71G VR continuous reverse voltage BYD71A BYD71B BYD71C BYD71D BYD71E BYD71F BYD71G IF(AV) average forward current BYD71A to D BYD71E to G IF(AV) average forward current BYD71A to D BYD71E to G Ttp = 55 C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 60 C; PCB mounting (see Fig.16); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 - - - - - - - - - - - 50 100 150 200 250 300 400 0.56 0.54 V V V V V V V A A PARAMETER repetitive peak reverse voltage - - - - - - - 50 100 150 200 250 300 400 V V V V V V V CONDITIONS MIN. MAX. UNIT
0.43 0.41
A A
1996 Sep 19
2
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
SYMBOL IFRM PARAMETER repetitive peak forward current BYD71A to D BYD71E to G IFRM repetitive peak forward current BYD71A to D BYD71E to G IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax t = 20 s half sine wave; Tj = Tj max prior to surge - - -65 -65 Tamb = 60 C; see Figs 8 and 9 - - - CONDITIONS Ttp = 55 C; see Figs 6 and 7 - -
BYD71 series
MIN.
MAX. 4.7 5.0 3.7 3.9 7 A A A A A
UNIT
PRSM
non-repetitive peak reverse power dissipation BYD71A to D BYD71E to G
250 150 +175 +175
W W C C
Tstg Tj
storage temperature junction temperature
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYD71A to D BYD71E to G VF forward voltage BYD71A to D BYD71E to G V(BR)R reverse avalanche breakdown voltage BYD71A BYD71B BYD71C BYD71D BYD71E BYD71F BYD71G IR reverse current VR = VRRMmax; see Fig 14 VR = VRRMmax; Tj = 165 C; see Fig 14 trr reverse recovery time BYD71A to D BYD71E to G when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A see Fig 18 IR = 0.1 mA 55 110 165 220 275 330 440 - - - - - - - - - - - - - - - - - - 1 75 V V V V V V V A A IF = 0.5 A; see Figs 12 and 13 CONDITIONS IF = 0.5 A; Tj = Tj max; see Figs 12 and 13 MIN. - - - - TYP. - - - - MAX. 0.84 0.90 1.05 1.11 V V V V UNIT
- -
- -
25 50
ns ns
1996 Sep 19
3
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
SYMBOL Cd PARAMETER diode capacitance BYD71A to D BYD71E to G dI R -------dt maximum slope of reverse recovery current BYD71A to D BYD71E to G THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm when switched from IF = 1 A to VR 30 V and dIF/dt = -1 A/s; see Fig.17 CONDITIONS f = 1 MHz; VR = 0 V; see Fig.15 MIN. - -
BYD71 series
TYP. 25 20
MAX. - -
UNIT pF pF
- -
- -
4 5
A/s A/s
VALUE 180 250
UNIT K/W K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.16. For more information please refer to the "General Part of associated Handbook".
1996 Sep 19
4
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
GRAPHICAL DATA
MCD565
BYD71 series
MCD564
handbook, halfpage
0.8
handbook, halfpage
0.8
IF(AV) (A) 0.6 lead length 10 mm
IF(AV) (A) 0.6 lead length 10 mm
0.4
0.4
0.2
0.2
0 0 BYD71A to D a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. 100 Ttp ( oC) 200
0 0 BYD71E to G a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. 100 Ttp ( oC) 200
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
MGC526
MGC527
handbook, halfpage
0.6
handbook, halfpage
0.6
IF(AV) (A) 0.4
IF(AV) (A) 0.4
0.2
0.2
0 0 100 Tamb ( oC) 200
0 0 100 Tamb ( oC) 200
BYD71A to D a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.16. Switched mode application.
BYD71E to G a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.16. Switched mode application.
Fig.4
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
Fig.5
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
1996 Sep 19
5
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
BYD71 series
MCD563
handbook, full pagewidth
5.0
I FRM (A)
= 0.05
0.1
2.5 0.2
0.5 1
0 10 -2
10 -1
10 0
10 1
10 2
10 3
t p (ms )
10 4
BYD71A to D Ttp = 55 C; Rth j-tp = 180 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 200 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD562
handbook, full pagewidth
5.0
I FRM (A)
= 0.05
0.1
2.5 0.2
0.5 1
0 -2 10 BYD71E to G
10
-1
10
0
10
1
10
2
10
3
t p ( ms )
10
4
Ttp = 55 C; Rth j-tp = 180 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 19
6
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
BYD71 series
MCD561
handbook, full pagewidth
4
I FRM (A) 3
= 0.05
0.1
2 0.2
1
0.5 1
0 10-2
10 -1
10 0
10 1
10 2
10 3
t p ( ms )
10 4
BYD71A to D Tamb = 60 C; Rth j-a = 250 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD560
handbook, full pagewidth
4
I FRM (A) 3
= 0.05
0.1
2 0.2
1
0.5 1
0 10 -2 BYD71E to G
10 -1
10 0
10 1
10 2
10 3 t p (ms )
10 4
Tamb = 60 C; Rth j-a = 250 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 19
7
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
MCD567
BYD71 series
handbook, halfpage
0.50
a=3 2.5
handbook, halfpage
0.50
MCD566
a=3 2.5 a = 1.57 1.42
P (W)
2
a = 1.57 1.42
P (W)
2
0.25
0.25
0 0 0.25 I F(AV) (A) 0.50
0 0 0.25 I F(AV) (A) 0.50
BYD71A to D a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.
BYD71E to G a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.
Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
MCD568
MCD569
handbook, halfpage
5
handbook, halfpage
5
IF (A) 4
IF (A) 4
3
3
2
2
1
1
0 0 1 2 3 VF (V) 4
0 0 1 2 VF (V) 3
BYD71A to D Dotted line: Tj = 175 C. Solid line: Tj = 25 C.
BYD71E to G Dotted line: Tj = 175 C. Solid line: Tj = 25 C.
Fig.12 Forward current as a function of forward voltage; maximum values. 1996 Sep 19 8
Fig.13 Forward current as a function of forward voltage; maximum values. Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
BYD71 series
3 10 handbook, halfpage
MCD582
10 2 handbook, halfpage
MCD559
IR (A) 10 2
C d (pF)
10
10 A, B, C, D
E, F, G 1 0 100 Tj ( oC) 200 1 1 10 10 2 10 3
VR (V)
VR = VRRMmax.
f = 1 MHz; Tj = 25 C.
Fig.14 Reverse current as a function of junction temperature; maximum values.
Fig.15 Diode capacitance as a function of reverse voltage; typical values.
handbook, halfpage
50 25 IF dbook, halfpage dI F dt 7 50 t rr 10% t dI R dt 100% 2 3
MGA200
IR
MGC499
Dimensions in mm.
Fig.16 Device mounted on a printed-circuit board.
Fig.17 Reverse recovery definitions.
1996 Sep 19
9
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
BYD71 series
handbook, full pagewidth
DUT +
IF (A) 0.5 1 t rr
10
25 V 50 0 0.25 0.5 IR (A) 1
t
MAM057
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns.
Fig.18 Test circuit and reverse recovery time waveform and definition.
1996 Sep 19
10
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
PACKAGE OUTLINE
BYD71 series
handbook, full pagewidth
3.5 max 0.55 max 1.7 max 29 min 3.0 max 29 min
MBC053
Dimensions in mm. The marking band indicates the cathode.
Fig.19 SOD91.
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1996 Sep 19
11
Not recommended for new designs

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